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Mr. Ryoma Ito won the Research Encouragement Award at the 11th Seminar of Advanced Power Semiconductors Section

Mr. Ryoma Ito (M1), a student in the Department of Electronic Engineering, received the Research Encouragement Award for his research presentation, “Effect of Counter Doping with Al Ion Implantation in SiC p-Channel MOSFETs,” which was given at the 11th lecture of the Advanced Power Semiconductor Sectional Meeting in November 2024.(November 26, 2024)