Mr. Xilun Chi wins IEEE EDS Japan Section Joint Student Award

Mr. Xilun Chi (3rd year PhD student, Department of Electronic Engineering) for his paper “Unique electron trapping and its impacts on electron mobility in SiC n-channel MOSFETs” at IEDM2024 (Dec. 7-11) in San Francisco,
IEEE EDS Japan Joint Chapter Student Award (IEDM) for the paper “Unique electron trapping and its impacts on electron mobility in SiC n-channel MOSFETs” presented at IEDM2024 (Dec. 7-11). (Award date: February 21).

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